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HfO2-based resistive RAMs have been irradiated with high-linear energy transfer heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. No relevant changes were observed in the irradiated cells on resistance distribution and programming voltages. The irradiation experiment has been performed without any applied bias (retention mode). Reasons for the...
HfO2-based resistive RAMs have been irradiated with high-LET heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. Reasons for the observed hardness are discussed.
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