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Low-temperature-grown GaAs (LT-GaAs)-based Fabry-Pérot cavity photoconductors, designed for RF and THz optoelectronics applications using1550 nm lasers, are studied. The sub-sampling of continuous waves at frequencies up to 300 GHz is presented. The duty-cycle-limited conversion losses measured up to 67 GHz show that this GaAs-based photoconductor behaves as a nearly perfect photoswitch controlled...
Transistors are possible THz detectors using rectification in the channel that can be applied for detection of high data-rate wireless communications, based on THz-frequency carrier. For the first time, we present the transmission of pseudo-random bit sequence at 0.2 THz using a commercial GaAs transistor and demonstrate open eye patterns up to 0.250 Gbps.
It is shown that a continuous wave output power reaching 1.8 mW at 252 GHz can be generated by photomixing in a low-temperature-grown GaAs photoconductor using a metallic mirror-based Fabry-Pérot cavity thanks to an impedance matching circuit.
It is shown that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a low temperature grown GaAs photoconductor using a metallic mirror Fabry-Pérot cavity. The output power is improved by a factor of about 100 as compared to the previous works on GaAs photomixers.
It is shown from on-wafer measurement that a continuous wave output power of 0.35 mW at 305 GHz can be generated by photomixing in a metal-metal Fabry-Pérot GaAs photoconductor.
Low temperature GaAs grown by an MBE system exhibiting Hall carrier mobility of 5000 cm2/v.s. is fabricated into continuous-wave (CW) Terahertz (THz) photomixers utilizing a dual-dipole antenna with an interdigitated feed structure. The characteristics of the CW THz photomixer are presented.
We present technological bricks and concepts under study which could permit build up of future THz remote sensing systems. Critical issues regarding such systems mainly rely on the availability of sensitive and compact detectors together with powerful and versatile sources. Potential use of plasma waves in nano-transistor is presented which can be exploited for the realization of an efficient mixer...
We report our investigation on low-temperature-grown GaAs THz photomixers using two different kind of antennas: silicon lens coupled spiral antenna and transverse electromagnetic horn antenna. We demonstrate that the horn radiates more power than the spiral above 600 GHz and at 2 THz the improvement is about a decade.
We have developed an epitaxial layer transfer technique for THz devices. Here we report the fabrication and the characterization of a THz photomixer on a silicon substrate. The active part of the photomixer is a low-temperature-grown GaAs mesa which has been transferred and layer bonded onto a Si substrate. The preliminary measurement of the THz signal generated in a photomixing configuration at 0...
We report our investigation on realization of 1.55 mum wavelengths sensitive photomixer based on GaAsSb/InP uni-travelling-carrier photodiode. The epitaxial structure and technological steps are described.
The investigation of THz generation using low-temperature-grown GaAs (LTG-GaAs) photoconductors integrated with horn antennas is reported. Results obtained using a photomixing experiment are presented. A maximum generated power of 1 muW at 780 GHz was achieved for an optical power of 2times80 mW and a photocurrent of 1 mA.
Photomixers that consist in a uni-travelling-carrier photodiode (UTC-PD) integrated with a TEM horn antenna (TEM-HA) have been realized and characterized.
We demonstrate a high-spectral-purity continuous-wave terahertz source, using a diode pumped Yb3+:CaF2 dual frequency laser. THz radiation is generated by photomixing the two frequencies in a low-temperature grown In0.23Ga0.77As photoconductor, doped with Be, and loading a spiral antenna. The frequency difference between the two optical modes is tuneable by step from d.c. to 2 THz. A maximum laser...
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