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Due to its non-volatility, high access speed, ultra low power consumption and unlimited writing/reading cycles, STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) has emerged as the most promising candidate for the next generation universal memory. However, the process of commercialization of STT-MRAM is hampered by its poor reliability. Generally, these reliability issues are caused by...
Spin transfer torque magnetic random access memory (STT-MRAM) has emerged as a potential candidate for the next-generation universal memory technology. However, many challenges still exist that block its commercialization and application. One of the main challenges is the reliability concerns, especially as technology scales down to nanometer nodes. For example, the intrinsic stochastic switching...
Recently, magnetic tunnel junction with in-plane magnetization (i-MTJ) has been exploited to behave as a binary stochastic synapse. However, it suffers from its limited level of synaptic weight, resulting in an inaccurate learning. In this work, a compound synapse that employs multiple perpendicular MTJs (p-MTJs) in series is proposed. It possesses an analog-like synaptic weight under weak programming...
Densely embedding Magnetic Tunnel Junctions (MTJ) in CMOS logic circuits is considered as one potentially powerful solution to bring non volatility, instant on/off and low standby power in today's programmable logic circuits, in order to overcome major drawbacks while preserving high operation speed. A critical issue in this process is the integration of MTJ electric signal to CMOS electronics, in...
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