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A comprehensive R&D program aiming at all-optical RAM buffer subsystem for optical packet switching will be presented, featuring nano-cavity based optical bit memory, a unique beam addressing optics, and optical SP and PS converters.
Novel active MMI bi-stable laser diodes are proposed and demonstrated. Using partly saturable-absorber configuration in active MMI, extremely wide hysteresis window of 94mA was achieved with 30fJ optical switching energy in 335??m total device length.
We demonstrate all-optical bistable memory operation with InGaAsP photonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at 40 muW and the operating energy required for switching is only 30 fJ.
Integrated optical RAM showed extremely wide and uniform hysteresis windows of 32 mA plusmn 2 mA (with operation current around 70 mA) using novel active MMI-BLD, with relatively high ON/OFF ratio of 18 dB in 315 times 600 mum2 total device size.
A new 5-year-long government-supported R&D program, aiming at all-optical RAM buffer will be presented. Focuses are on nano-structured optical RAM devices, its optical interface, buffer design and scheduling as well as its system performance evaluation.
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