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The on-chip integration of all-optical random-access memories based on a photonic crystal nanocavity was achieved. Their ultralow power consumption, small footprint, and 40-Gb/s optical signal capability might be beneficial for future optical packet processing.
An all-optical random-access memory with an ultralow power consumption of 30 nW was achieved by using a photonic crystal nanocavity. Integrated o-RAM chip operation for 4-bit, 40-Gb/s signal was also demonstrated for the first time.
High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) all-optical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses.
Novel active MMI bi-stable laser diodes are proposed and demonstrated. Using partly saturable-absorber configuration in active MMI, extremely wide hysteresis window of 94mA was achieved with 30fJ optical switching energy in 335??m total device length.
We demonstrate all-optical bistable memory operation with InGaAsP photonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at 40 muW and the operating energy required for switching is only 30 fJ.
Integrated 4-bit (355 times 1200 mum2) optical memory elements, using novel active multi-mode-interferometer bi-stable laser diodes, showed single, common and low operation current (55 mA) with uniform characteristics.
Integrated optical RAM showed extremely wide and uniform hysteresis windows of 32 mA plusmn 2 mA (with operation current around 70 mA) using novel active MMI-BLD, with relatively high ON/OFF ratio of 18 dB in 315 times 600 mum2 total device size.
In this study, we apply recently-developed photonic-crystal ultrahigh-Q nanocavities to on-chip all-optical control, including all-optical bistable nodes towards photonic RAM and all-optical logic, all-dielectric slow-light media, and novel adiabatic wavelength conversion.
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