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The on-chip integration of all-optical random-access memories based on a photonic crystal nanocavity was achieved. Their ultralow power consumption, small footprint, and 40-Gb/s optical signal capability might be beneficial for future optical packet processing.
An all-optical random-access memory with an ultralow power consumption of 30 nW was achieved by using a photonic crystal nanocavity. Integrated o-RAM chip operation for 4-bit, 40-Gb/s signal was also demonstrated for the first time.
A comprehensive R&D program aiming at all-optical RAM buffer subsystem for optical packet switching will be presented, featuring nano-cavity based optical bit memory, a unique beam addressing optics, and optical SP and PS converters.
We demonstrate an all-optical memory based on photonic crystal nanocavities with novel buried heterostructure, which solves the heating problem and enhances the carrier confinement, enabling long memory-time operation with sub-μW power consumption.
Progresses of 5-year-long government-supported R&D program launched in 2007, aiming at all-optical RAM buffer will be presented. Focuses are on nano-structured optical bit memory for RAM, the optical interfaces such as serial/parallel converter and optical addressor as well as architecture design of optical packet switch with small-size buffers and the performance evaluation.
Integrated optical RAM showed extremely wide and uniform hysteresis windows of 32 mA plusmn 2 mA (with operation current around 70 mA) using novel active MMI-BLD, with relatively high ON/OFF ratio of 18 dB in 315 times 600 mum2 total device size.
A novel MMI-based bi-stable laser is proposed for realizing compact size. Relatively low operation current of 100 mA (8 mA hysteresis), and high ON/OFF optical power-ratio of 15 dB were successfully achieved (@L=550 mum).
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