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Hetero‐epitaxy for integration of efficient III‐V lasers on silicon can enable wafer‐scale silicon photonic integrated circuits, which can unleash the full advantages of silicon photonics in production on large silicon wafers with low cost, high throughput, and large bandwidth and large‐scale integration. In this work, efficient III‐V distributed feedback (DFB) lasers selectively grown on (001) silicon‐on‐insulator...
In‐Plane 1.5 µm Distributed Feedback Lasers Selectively Grown on (001) SOI
In article number 2300549, Kei May Lau and colleagues present efficient and in‐plane III–V distributed feedback (DFB) lasers selectively grown on (001) silicon‐on‐insulator (SOI) wafers. This approach enables the placement of lasers exactly where they are needed in the photonic integrated circuit in an elegant, scalable, and...
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