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A record conversion efficiency of 11.4% at 100 GHz using a heterostructure barrier varactor (HBV) quintupler is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-waveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate
The fabrication of an airbridged low parasitic resonant tunnelling diode is described. The devices were fabricated from strained In/sub 0.1/Ga/sub 0.9/As/GaAs/AlAs layers. They yielded excellent DC characteristics with simultaneously high peak-to-valley current ratios of 7:1 and peak current of 50 kA/cm/sup 2/ at 300 K. RF measurements up to 40 GHz showed that the total parasitic capacitance was 0...
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