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The molybdenum disulfide (MoS2) nanosheets adhered on GaAs wafer is employed as MoS2/GaAs saturable absorber (SA) in the Q-switched Nd:YVO4 laser. The MoS2/GaAs SA is successfully fabricated by liquid-exfoliated method of transferring a few-layer MoS2 to 350 μm-depth GaAs wafer. Under the absorbed pump power of 1.77 W, the pulses with 321.6 mW average-output power, 51.3ns pulse duration and 769.7 kHz...
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