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Single-phase pure and Zr doped Bi4Ti3O12 thin films have been prepared via the solution–gelation technique. It shows that ferroelectric properties are enhanced obviously after doping Zr. Such improved ferroelectric properties are attributed to the lattice parameter change, which leads to ionic displacement and octahedral distortion after doping Zr. Meanwhile, the fatigue behaviors of the present films...
Single-phase multiferroic BiFeO 3 and Holmium (Ho) doped BiFeO3 thin films have been prepared via solution–gelation technique. It shows that ferroelectric properties are enhanced and leakage current is reduced obviously after doping Ho. Such improved ferroelectric and leakage properties are attributed to the structural transforms from rhombohedral to the coexistence of tetragonal and orthorhombic...
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