The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Spin transfer torque magnetoresistive RAM (STT-MRAM) is a potential candidate for next-generation universal memory technology with high density, high-speed access time, and nonvolatile characteristics. Due to good scalability of the magnetic tunnel junction (MTJ) cell in sub-20nm technical nodes, STT-MRAM also has potential as a system memory, possibly replacing DRAM or SRAM in some applications....
For flash memory below the 63nm node, two step Undoped Silicon Glass (USG) deposition and one step etch-back processes are applied in manufacturing processes to get good gap fill properties for Shallow Trench Isolation (STI) structures. The characteristics of the silicon surface after an etch-back process influences the following second USG deposition thickness and variation because the USG deposition...
We report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 230nm-thick double polymer dielectric composed of 30nm-thin low-k poly-4-vinyphenol (PVP) and 200nm-thick high-k poly(vinylidene fluoride/trifluoroethylene) [P(VDF–TrFE)] dielectric on polyethersulfone (PES) films. Our 230nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ∼2MV/cm, a high capacitance...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.