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Al‐, Ga‐, and In‐doped ZnO thin films were deposited on glass substrates by aerosol assisted chemical vapour deposition (AACVD) at a deposition temperature of 450 °C. The air‐stable compound zinc acetylacetonate [Zn(acac)2] was used as a Zn source, whilst for the dopants of Al, Ga and In, the corresponding trichloride was used. Methanol solutions of the metal salts were used as precursor solutions...
This paper presents a comparative study on gas sensing properties of pure and doped ZnO nano powders. To facilitate doping, Aluminum and nickel precursors were used as dopant/co‐dopants using a simple and reproducible co‐precipitation method. Pure ZnO and samples with compositions Zn0.99M0.01O (M = Al/Ni) and Zn0.99Al0.005Ni0.005O were prepared to evaluate the effect of Al/Ni doping/co‐doping. The...
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