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The mechanism for direct-write electron-beam lithography in insulating resists is introduced in this letter, and it is based on damage by the induced electric field in transmission electron microscope. Under this mechanism, the direct-write EBL is electron dose-rate dependent, and there is a dose-rate threshold, below which the lithographic process does not operate, regardless of the total electron...
Electric fields can be induced by electron irradiation of insulating thin film materials. In this work, the electric fields under a broad beam illumination in transmission electron microscopy (TEM) are analyzed for insulating samples. Some damage phenomena observed can be interpreted by the mechanism of damage by the induced electric field (DIEF). For broad-beam illumination in an ultra-thin specimen,...
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