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Al(60nm) and Ti(40nm)/Al(160nm) metal layers have been deposited by thermal evaporation onto n-GaN epitaxial layers grown by metal organic chemical vapour deposition (MOCVD) on a c-plane sapphire substrate. The samples have been annealed at 300, 400, 700 or 900°C for 10min in vacuum. The microstructural and electrical properties of the contacts have been investigated by electron microscopy, X-ray...
Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900°C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current–voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloying and...
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