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Thermal annealing and electromigration (EM) tests were performed at 125–175°C with 2.2×10 4 A/cm 2 conditions in order to investigate the growth kinetics of intermetallic compound (IMC) in Cu/thin Sn/bump. Cu 3 Sn was formed and grown at the Cu pillar/Cu 6 Sn 5 interface with increasing annealing and current stressing times. IMC thickness increased linearly...
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