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The biaxial modulus and the coefficient of thermal expansion (CTE) of Ge 2 Sb 2 Te 5 (GST) films with the thickness of 300 nm were characterized using the substrate curvature method on two different substrates. The elastic modulus of the GST films was also separately determined using nanoindentation. Measured biaxial modulus and CTE from substrate curvature method were 29.5±1...
The structural and electrical resistance properties of excess-Sb Ge 2 Sb 2+x Te 5 (Sb-GST) films were investigated. As the Sb-doping concentration was increased, the face center cubic structure of Sb-GST films was no longer observed, at Sb concentrations exceeding 27%, the amorphous phase directly changed to hexagonal closed-packed structures. The crystallization temperature...
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