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The effect of processing at 610K under hydrostatic pressure, HP, up to 1.1GPa on the structure and magnetic properties of (001) oriented Czochralski and Floating zone grown silicon (Cz-Si and Fz-Si) implanted with Mn + at 160keV to a dose 1×10 16 cm −2 has been investigated. Temperature, T S , of Si at implantation was kept at 340K for Cz-Si and at 610K for Fz-Si. Structure...
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