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The ability of plasmonic structures to manipulate light well below the diffraction limit has enabled the miniaturization of a range of chipscale optoelectronic devices. Of the many emerging applications, the development of plasmon-enhanced photodetection schemes has witnessed particularly impressive progress. For such devices, the scaling behavior is very favorable, and some unavoidable, detrimental...
Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge1−xSnx) PIN photodetectors at longer wavelengths. Such external stressor films show promise for extending the application of Ge1−xSnx optoelectronic devices into the mid-infrared range.
A highly sensitive single‐walled carbon nanotube/C60‐based infrared phototransistor is fabricated with a responsivity of 97.5 A W−1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of –0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.
We demonstrate propagation, routing round bends and integrated detection of light on a deeply sub-wavelength scale in two-conductor metallic slot waveguides. Light with cross-section ∼ λ2/100 propagates ∼10λ at 850nm in good agreement with simulations.
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