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The initial nucleation stages during deposition of SiO 2 by remote plasma enhanced chemical vapour deposition (PECVD) have been monitored by XPS inelastic peak shape analysis. Experiments have been carried out on two substrates, a flat ZrO 2 thin film and a silicon wafer with a native silicon oxide layer on its surface. For the two substrates it is found that PECVD SiO 2 grows...
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