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This paper presents a comparative study of SiO 2 thin films prepared at room temperature by ion beam induced chemical vapor deposition (IBICVD) and plasma enhanced chemical vapor deposition (PECVD) methods. The films are characterized by atomic force microscopy (AFM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR), Rutherford backscattering spectroscopy...
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