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GaN powders doped with varying amounts of Zn were deposited on silica glass substrates at 1160°C by reaction for 1h of NH 3 with gaseous Ga 2 O and Zn. These precursor gases were produced by reaction of C with Ga 2 O 3 and ZnO, respectively, called carbothermal reduction and nitridation (CRN). For comparison, Zn-doped GaN powders were produced at 1160°C by direct nitridation...
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