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Nanowires of gallium oxynitride with wurtzite type structure were grown using seed crystals obtained by ammonia nitridation of an amorphous gallium oxide precursor containing 3at% nickel additive. The seed crystals on a silica substrate were annealed with the amorphous gallium oxide precursor under ammonia flow to grow gallium oxynitride nanowires. The nanowires grew to lengths of about 150μm along...
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