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Micrometer- to millimeter-sized wurtzite-type GaN crystals were grown on graphite substrates and at the edge of a silica glass tube at 840–1200°C for 5–120min by the reaction of NH 3 with Ga 2 O vapor, produced by carbothermal reduction of Ga 2 O 3 powder at 970°C. The GaN crystals were characterized by scanning electron microscopy, optical microscopy, X-ray diffraction,...
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