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Cubic phase silicon carbide (3C-SiC) nanowires (labeled as “Sample 1”) with diameters ranging from 10nm to 80nm and lengths up to several micrometers were obtained by using CHI 3 , Si powder, and metallic Na as reactants at 230°C. In addition, SiC polyhedra (labeled as “Sample 2”) with smooth surfaces and diameters of 2–5μm were obtained by using the different amounts of the same reactants...
SnS 2 films have been deposited on glass and alumina plate substrates by the reactions between an organotin precursor [tetrabuyltin, (CH 2 CH 2 CH 2 CH 3 ) 4 Sn] and carbon disulfide in n-hexane at the temperature range 180-200 o C for 10-40 h. The reaction system was oxygen free and applied at a moderate temperature. The films so prepared were...
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