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Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The sheet resistance of 2-D electron gas in the UTB Al0.22Ga0.78N(5-nm)/GaN heterostructure is effectively reduced by SiNx passivation grown by low-pressure chemical vapor deposition, from 2570 to $334~\Omega $ /□. The fabricated...
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