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We propose using supermode control to enhance the modal gain in integrated hybrid Si/III-V optoelectronic circuits. Numerical simulations predict that a 4-fold enhancement in modal gain can be achieved with optimal design.
Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.
We report the first room temperature CW operation of two dimensional single-mode edge-emitting photonic crystal Bragg lasers. Single-mode lasing with single-lobed, diffraction limited far-fields is obtained for 100mum wide and 550 mum long on-chip devices.
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