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Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.
Including the effect of vertical resonant emission, we analyze modal properties of surface-emitting annular Bragg lasers and suggest design guidelines with numerical demonstration of large-area, high-efficiency, single-mode lasing in such lasers.
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