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This paper demonstrates the role of high-k La2O3 on the electrical performance of the Au/n-GaN Schottky junction (SJ) as an insulating layer between the Au and n-GaN films. First, the La2O3 is deposited on a n-type GaN surface by e-beam technique and analysed for its structural and chemical properties with x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) approaches. XRD and XPS results...
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