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Scanning Electron Microscopy (SEM) combined with selective electrochemical etching was used to assess two-dimensional (2-D) dopant profiles in p+/n junctions that formed by using BF2 implantation followed by annealing. It was discovered that the electrochemically delineated junction depth (dj) increased with an increase in the BF2 implantation energy. It was also found that, considering the mechanism...
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