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Highly scaled GaN T-gate technology offers devices with high ft/fMAX, and low minimum noise figure while still maintaining high breakdown voltage and high linearity typical for GaN technology. In this paper we report an E-band GaN power amplifier (PA) with output power (Pout) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA). We also report the...
We report the first W-band GaN receiver components using a next generation, highly scaled GaN device technology. This technology (40nm, fT= 220 GHz, fmax= 400 GHz, Vbrk > 40V) enables receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability. This paper includes...
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