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We have investigated different methods for removing the HF/CO 2 post-etch residues from blanket and patterned wafers of borophosphosilicate glass. The use of co-solvents, rinsing the residues with DI water followed by CO 2 -based drying process, and the use of water-in-CO 2 (W/C) microemulsions were explored as possible methods to remove the etch residues. It was found that...
This work demonstrates that surfactant aided supercritical CO2 cleaning can effectively apply to the removal of dry etching residues. A benefit of this process is from an environmental as well as technological perspective. It allows dramatic reduction in water and chemical consumptions while enabling the construction of tiny features in semiconductors and weak microstructures in MEMS devices.
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