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SIREX (Scanning Infrared Stress Explorer) is a photo‐elastic microscope in this case applied to characterize the temperature dependence of stress induced by copper Through Silicon Via (TSV) structures in silicon. The temperature was varied between 285 and 320 K. SIREX provides images of the lateral distribution of Δσ being the difference of the in‐plane principal stress components. The single TSV...
SIRD (Scanning Infrared Depolarization Imager) and SIREX (Scanning Infrared Stress Explorer) are measurement systems to evaluate and visualize the stress distribution in semiconductor materials and devices. Some main fields of application are crystal growth, high temperature processing of silicon wafers as well as the 3D‐structuring of silicon‐based microelectronic devices. The used strategies of...
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