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We present in CPEM 2012 the latest quantum Hall (QH) experimental results of GaAs-AlGaAs Hall devices fabricated by NIM. AuGeNi and In are utilized as the contacts material. Precision measurement indicates quantized Hall devices with low contact resistance and good breakdown current are obtained.
Till now, quantized Hall devices distributed by the BIPM are used in NIM's quantized Hall resistance standard. In this paper, we report the preliminary results of quantized Hall devices with GaAs-AlGaAs heterostructures fabricated by ourselves. The device is with AuGeNi contacts for reliability consideration, but the contacts are with relatively large resistances for layer contents and annealing condition...
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