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The influence of doping upon the phase change characteristics of Ge2Sb2Te5 (GST) has been determined with a variety of techniques including four-point-probe electrical resistance measurements, grazing incidence X-ray diffraction (XRD), X-ray reflectometry (XRR) and a variable incident angle spectroscopic ellipsometer (VASE) and a static tester. Doping with Bi, Sn or In maintains the NaCl-type crystalline...
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