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Flash Memory Devices
In article number 2200659, Seung Soo Kim, Cheol Seong Hwang, and co‐workers review the current status and prospects of semiconductor flash memory devices. They also describe the critical challenges for the materials, circuit architecture, fabrication processes, and programming techniques.
Vertically integrated NAND (V‐NAND) flash memory is the main data storage in modern handheld electronic devices, widening its share even in the data centers where installation and operation costs are critical. While the conventional scaling rule has been applied down to the design rule of ≈15 nm (year 2013), the current method of increasing device density is stacking up layers. Currently, 176‐layer‐stacked...
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