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Antiferroelectric HfxZr1−xO2 (HZO, x=0.1–0.3) films are reported herein as new Si-compatible materials for monolithic devices for pyroelectric energy harvesting, electrocaloric cooling, electrostatic energy storage, and infrared sensing. Hf0.2Zr0.8O2 and Hf0.3Zr0.7O2 films could work as pyroelectric energy harvesters using the Olsen cycle with the harvested energy densities of 11.5 and 5.7Jcm−3cycle...
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