The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Pt/Ta2O5/HfO2−x/Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel‐cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming‐free, self‐rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long‐term reliability, and only...
Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric‐field distribution can solve the non‐uniformity issue of future ReRAM.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.