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The effects of post-deposition annealing (PDA) on the electrical characteristics of ZrO2 and HfO2 gate dielectric films were investigated. After PDA at 600°C, the insulating properties of ZrO2 were improved, while those of HfO2 were deteriorated. The improved insulating properties of ZrO2 are attributed to both the negligible increase of interfacial layer (IL) thickness and the transformation of its...
HfO2, HfZrxOy and ZrO2 gate dielectrics are systematically compared in terms of the nMOS PBTI and pMOS NBTI. Compared to HfO2, ZrO2 exhibits higher capacitance and superior nMOS mobility characteristics. In addition, as the ZrO2 content increases, Vth shift under the nMOS PBTI stress is dramatically reduced. This is mainly contributed to the lower density of pre-existing bulk traps related to the...
Quaternary Pb(Zr,Ti)Ox [PZT] films were deposited at 240??C by a combination of liquid injection atomic layer depositions (ALD) of binary PbO, TiOx, and ZrOx thin films. To find the optimum set of precursors different combinations of five precursors were tested: Pb(C11H19O2)2 [Pb(DPM)2], Ti(OC3H7)2(C11H19O2)2 [Ti(Oi-Pr)2(DPM)2] or Ti(OC3H7)4 [Ti(Oi-Pr)4], and Zr(C11H19O2)4 [Zr(DPM)4] or Zr(C9H15O2)4...
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