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A liquid injection atomic layer deposition (ALD) process has been developed for conformal deposition of lead zirconate titanate thin films on three dimensional structured silicon substrates. Future applications of these structures address the field of nonvolatile ferroelectric memory devices. PZT films were prepared by mixing the binary ALD processes of PbOx, TiOx, and ZrOx. It was found that the...
Local ferroelectric properties and leakage current behaviors of atomic-layer-deposited PbTiO3 (PTO) thin films on Ir electrode were investigated by piezo-force microscopy (PFM) and conductive atomic-force microscopy (CAFM). The as-grown PTO thin films were amorphous due to their low growth temperature (200degC). Post-deposition annealing (PDA) at 600degC for 30 min under 02 atmosphere using furnace...
Atomic layer deposition of ferroelectric PbTiO3 (PTO) thin films and its component oxide films were attempted using the Pb(DMAMP)2 and Ti(Oi-Pr)4 or Ti(Ot-Bu)4, as the Pb-and Ti-precursors, respectively, and H2O as oxidant at a wafer temperature of 200 on Ir/IrO2/SiO2/Si substrate. The stoichiometric PTO thin films were grown by a proper control of the cycle ratio of the PbO and TiO2 cycles. The increase...
After an evaluation of Zr precursor, quaternary Pb(Zr,Ti)Ox [PZT] films were prepared by a combination of binary atomic layer deposition (ALD) processes. ZrOx films were deposited on Pt/TiOx/SiOx/Si substrates using liquid injection ALD. Zr(C11H19O2)4 [Zr(DPM)4] dissolved in ethylcyclohexane (ECH) with a concentration of 0.1 M and water were used as precursor and oxidant, respectively. According to...
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