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A model for filamentary conduction in RRAMs based on Metal-Insulator-Metal (MIM) structures has been developed. The model describes RRAM resistive switching processes by calculating the formation and rupture of conductive filaments (CFs) in the dielectric. The resistance of the electrodes, of the CF and the hopping current in the gap between the CF tip and the electrode, are taken into consideration...
The use of nanofillers to induce certain changes in electrical properties of polymeric materials, show great interest for electronic and electrical engineering applications. In this paper, composites of HDPE filled with submicrometric particles of tetragonal BaTiO3 have been prepared. An extraordinary uniform dispersion of the particles was achieved from a first process of mixing by high energy ball...
Al/HfO2/SiNx:H/n-Si metal-insulator-semiconductor (MIS) capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron-cyclotron-resonance assisted chemical-vapor-deposition (ECR-CVD). Silicon nitride thickness was varied from 2.96 to 6.64 nm. Afterwards, 12 nm thick hafnium oxide films were deposited by the high-pressure...
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