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Carbon doping in AlxGa1−xAs was achieved using different approaches. The moderate growth temperature of 650°C was employed to grow C bulk-doped AlxGa1−xAs with a high Al mole fraction. The hole-density was altered using different V/III ratios. The trimethylaluminum (TMAl) was used as an effective C δ-doping precursor for growth of C δ-doped pipi doping superlattices in AlxGa1−xAs. the average hole-density...
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