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Hexagonal boron nitride (h-BN) exhibits a wide band gap of ~5.5eV, and is well known for its high thermal and chemical inertness. Thus, it is commonly considered that h-BN is inappropriate for photocatalysis and photovoltaic conversion applications. Here, we show that the rationally designed BN porous sheets (BNPS) with richly exposed (002) plane edges (functionalized with hydroxyl groups) exhibit...
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