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Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300degC. Surface acoustic wave (SAW) devices fabricated on AIN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphire- based SAW device is presented. The oscillation frequency decreased when the device was illuminated...
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