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The degradation dynamics of magnesium oxide (MgO) layers in MOS structures has been investigated. It is shown that the shift of the conduction characteristics caused by both ramped and constant voltage stresses is well described by power-law models and that the signature of charge trapping is still visible even after the dielectric breakdown (BD) of the insulating film. The occurrence of progressive...
In this work, we report on the occurrence of the soft breakdown (SBD) failure mode in 20 nm-thick films of magnesium oxide (MgO) grown on Si substrates. To our knowledge, this is the first observation of this failure mechanism in a high-kappa gate dielectric with such a large oxide thickness. We show that the I-V characteristics follow the power-law dependence typical of SBD conduction in a wider...
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