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Blue diode laser annealing (BLA) systems have been successfully developed for low‐temperature crystallization from amorphous silicon film on glass substrates. It is demonstrated that it can achieve high quality poly‐Si film with large grain sizes, as studied by optical microscopy, Raman spectroscopy and AFM measurements. The p‐channel poly‐Si TFT on glass using BLA exhibited the field‐effect mobility...
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