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A gate‐modulated nanowire oxide photosensor is fabricated by electron‐beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 106 test cycles, and gate‐pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus...
The photoresponse characteristics of metal‐oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous‐Si‐based photo‐TFT, the MeO photo‐TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high‐speed array operation is used, yet maintaining a...
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