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We fabricated firstly body-tied triple-gate NMOSFETs that have fin top width of 30nm, fin bottom width of 61nm, fin height of 99nm, and gate length of 116nm. Fabrication process steps of the devices are compatible with that of conventional bulk planar channel MOSFET technology and explained in detail in this paper. This MOSFET shows excellent transistor characteristics, such as very low subthreshold...
Nanocrystal memory is more scalable and operates under lower voltage than conventional floating gate memory thus it is currently a strong candidate for the next generation nonvolatile memory. However, those merits also raise critical problems on data retention and disturbance problems. Both problems are related to the sensitivity of the tunnel barrier on the applied field. When the field-sensitivity...
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