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We fabricated high-performance thin-film transistors (TFTs) with an amorphous-Al-Sn-Zn-In-O (a-AT-ZIO) channel deposited by cosputtering using a dual Al-Zn-O and In-Sn-O target. The fabricated AT-ZIO TFTs, which feature a bottom-gate and bottom-contact configuration, exhibited a high field-effect mobility of 31.9 cm2/V??s, an excellent subthreshold gate swing of 0.07 V/decade, and a high Ion/off...
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