The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper evaluates various optical metrology techniques for in-line control of the uniformity of 3-D stacked structures. Key process steps during 3-D integration flow were identified and characterized in order to quantify their specific intra-wafer dispersion signature. The cross correlation between the various intra-wafer process step signatures was then analyzed to verify the data set consistency...
We report wavelength selective device nonuniformity of 1 nm over a 200 mm SOI wafer using CMOS fabrication technology. We also report correlation between device density and nonuniformity.
For high density 3D integration to become reality, wafers must be drastically thinned to less than 100 mum. In this thickness range, the ultra thin Si wafers cannot be handled as such anymore and a carrier must be introduced for mechanical stability. However, this also introduces a difficulty in measuring the precise thickness and thickness variation of the device wafer only. In this paper, we present...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.