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As device geometry shrinks to 0.35 mm and below, the parasitic capacitance between closely spaced metal lines becomes important in terms of RC time delay in device switching. In this study, we investigated the use of fluorine doped plasma enhanced chemical vapour deposition (PECVD) grown silicon oxide thin film as a low dielectric constant inter-metal dielectric (IMD) material. We evaluated C ...
Fluorine-doped plasma-enhanced chemical vapour deposition (PECVD) tetraethylorthosilicate (TEOS) SiO 2 thin film was investigated for improvement in gap-filling capability as an inter-metal dielectric. Both C 2 F 6 and triethoxyfluorosilicate (TEFS) were evaluated as fluorine (F) dopants. Both kinds of F-doped films provided significantly better gap-filling capability than...
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